SE1230Q Datasheet | SiGe Semiconductor Inc.

Description Si Ge Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. Si Ge Semiconductor’s SE1230 is a fully integrated AGC amplifier aimed primarily at SONET OC-48 and SDH STM-16 systems. The device may also be used in any data application with input data rates up to 2.5 Gb/s. The device is designed with differential I/Os and signal levels patible with Si Ge Semiconductor’s SE1030 and SE1031 transimpedance amplifiers. A system block diagram is shown after the functional description , on page 4. Optimum performance is provided by differential connections but with appropriate terminations, the device can also be used in single-ended mode if required by the application. Features Single +3.3 V supply Power dissipation = 230 m W (typ) Noise figure < 12 d B Small signal gain = 23.5 d B differential Fully integrated AGC function On-chip 50 Ω input and output terminations Wide bandwidth (- 3 d B) > 2.0 GHz Maximum input level of 200 m Vpk AGC output level of 370 m Vpk differential Loss of signal functionality Single-ended or differential operation Minimal external ponents Operating ambient temperature range = -40°C to +85°C Equivalent to Nortel Networks AC10 Ordering Information Type SE1230Q Package 5 mm, 32 pin LQFP Remark None Functional Block Diagram INP INN Variable Gain Output Buffer OUTP OUTN SE1230 AGC Amp 2.5 Gb/s OUTP OUTN Integrator Rectifier Rectifier/ parator Vref2 LOS_INIT Bandgap Ref Vref1 AGC_ADJ 49-DST-01 Rev 1.4 Apr 29/02 1 of 9 Light Charger™ 2.5 Gb/s Automatic Gain Control Amplifier Final Pin Out Diagram AGC_ADJ 32 31 GND GND INP GND INN GND VCC VCC 1 2 3 4 5 6 7 8 24 23 22 GND GND OUTP GND OUTN GND VCC VCC Top...