BFQ70 Datasheet | Siemens Semiconductor Group

NPN Silicon RF Transistor For low-noise IF and broadband amplifiers in antenna and telemunications systems at collector currents from 2 m A to 20 m A. q Hermetically sealed ceramic package q Hi Rel/Mil screening available. q BFQ 70 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 70 Marking 70 Ordering Code (tape and reel) Q62702-F774 Pin Configuration 1 2 3 4 B E C E Package1) Cerex-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 121 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS ≤ ≤ Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg Values 15 20 20 2.5 35 4 300 175 - 65 … + 175 - 65 … + 175 Unit V m A m W ˚C 260 180 K/W 1) 2) 3) For detailed dimensions see chapter Package Outlines. Package mounted on alumina 16 mm × 25 mm × 0.7 mm. TS is measured on the collector lead at the soldering point to the pcb. BFQ 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 3 m A, VCE = 6 V IC = 10 m A, VCE = 6 V Collector-emitter saturation voltage IC = 20 m A, IB = 1 m A Base-emitter voltage IC = 10 m A, VCE = 6 V V(BR)CE0 ICB0 IEB0 h FE 50 50 VCEsat VBE - - - 130 0.1 0.78 250 - 0.4 - V 15 - - - - - - 50 10 V n A µA Values typ. max. Unit - BFQ...