BFQ72
BFQ72 is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
NPN Silicon RF Transistor q q q q
BFQ 72
For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 m A to 30 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening available. CECC-type available: CECC 50002/263.
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 72 Marking 72 Ordering Code (tape and reel) Q62702-F776 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 112 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction
- ambient 2) Junction
- soldering point3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg
Values 15 20 20 2.5 50 10 350 175
- 65 … + 175
- 65 … + 175
Unit V m A m W ˚C
260 180
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ 72
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 25 m A, VCE = 5 V IC = 50 m A, VCE = 5 V Collector-emitter saturation voltage IC = 50 m A, IB = 5 m A Base-emitter voltage IC = 25 m A, VCE = 5 V V(BR)CE0 ICES ICB0 IEB0 h FE 40 40 VCEsat VBE
- - 90
- 0.15 0.78 200
- 0.4
- V 15
- -
- -
- -
- - 10 50 10 V
µA
Values typ. max.
Unit n...
