BFQ71 Datasheet | Siemens Semiconductor Group

NPN Silicon RF Transistor q BFQ 71 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 m A to 20 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening available. CECC-type available: CECC 50002/260. q q q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 71 Marking 71 Ordering Code (tape and reel) Q62702-F775 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 103 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS ≤ ≤ Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg Values 15 20 20 2.5 30 4 300 175 - 65 … + 175 - 65 … + 175 Unit V m A m W ˚C 320 240 K/W For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) BFQ 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 m A, VCE = 6 V IC = 20 m A, VCE = 6 V Collector-emitter saturation voltage IC = 30 m A, IB = 3 m A Base-emitter voltage IC = 5 m A, VCE = 6 V V(BR)CE0 ICB0 IEB0 h FE 40 40 VCEsat VBE - - 90 100 0.16 0.78 250 - 0.4 - V 15 - - - - - - 50 10 V n A µA Values typ. max. Unit - BFQ 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 5 m A, VCE = 6 V, f = 200 MHz IC = 20 m A, VCE = 6 V, f = 200 MHz Collector-base capacitance VCB = 6 V, VBE = vbe = 0, f = 1 MHz Collector-emitter...