BFQ74
BFQ74 is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
NPN Silicon RF Transistor q
BFQ 74
For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telemunications systems at collector currents from 1 m A to 25 m A. Hermetically sealed ceramic package. Hi Rel/Mil screening available. q q
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 74 Marking 74 Ordering Code (tape and reel) Q62702-F788 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Peak collector current, f ≥ 10 MHz Base current Total power dissipation, TS ≤ 115 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction
- ambient 2) Junction
- soldering point3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB Ptot Tj TA Tstg
Values 16 25 25 2 35 45 5 300 175
- 65 … + 175
- 65 … + 175
Unit V m A m W ˚C
280 200
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ BFQ 74 74
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 15 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 m A, VCE = 10 V IC = 15 m A, VCE = 10 V Collector-emitter saturation voltage IC = 30 m A, IB = 3 m A Base-emitter voltage IC = 10 m A, VCE = 10 V V(BR)CE0 ICES ICB0 IEB0 h FE 50 50 VCEsat VBE
- - 110 120 0.13 0.78 250
- 0.3
- V 16
- -
- -
- -
- - 100 50 10 V
µA
Values typ. max.
Unit n...
