BFQ75 Datasheet | Siemens Semiconductor Group

PNP Silicon RF Transistor q q BFQ 75 For broadband amplifiers up to 2 GHz at collector currents from 5 m A to 30 m A. plementary type: BFQ 72 (NPN). ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 75 Marking 75 Ordering Code (tape and reel) Q62702-F803 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS ≤ 112 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS ≤ ≤ Symbol VCE0 VCES VCB0 VEB0 IC Ptot Tj TA Tstg Values 12 1 15 2 50 350 175 - 65 … + 175 - 65 … + 175 Unit V m A m W ˚C 260 180 K/W For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) BFQ 75 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 m A, VCE = 5 V AC Characteristics Transition frequency IC = 30 m A, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 10 m A, VCE = 8 V, f = 10 MHz, ZS = 50 Ω IC = 10 m A, VCE = 8 V, f = 800 MHz, ZS = 50 Ω Power gain IC = 30 m A, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt f T Ccb Cibo Cobs F - - Gpe - 2.2 3 14 - - - - - - - 5 0.75 1.6 1.1 - - - - d B GHz p F V(BR)CE0 ICB0 IEB0 h FE 12 - - 20 - - -...