BSS125 Datasheet | Siemens Semiconductor Group

BSS 125 SIPMOS ® Small-Signal Transistor - N channel - Enhancement mode - VGS(th) = 1 2.5 V Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125 Pin 2 D Marking SS125 Pin 3 S 600 V 0.1 A RDS(on) 45 Ω Package TO-92 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V VDS V RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.1 TA = 35 °C DC drain current, pulsed IDpuls TA = 25 °C Power dissipation Ptot TA = 25 °C Semiconductor Group 12/05/1997...