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BTS133 - Smart Lowside Power Switch

Description

N channel vertical power FET in Smart SIPMOS ® chip on chip technology.

Fully protected by embedded protected functions.

Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal Shutdown.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 21 7 V mΩ A A 2000 mJ.

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Datasheet preview – BTS133

Datasheet Details

Part number BTS133
Manufacturer Siemens Semiconductor Group
File Size 138.86 KB
Description Smart Lowside Power Switch
Datasheet download datasheet BTS133 Datasheet
Additional preview pages of the BTS133 datasheet.

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Full PDF Text Transcription

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HITFET® BTS 133 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 21 7 V mΩ A A 2000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology.
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