BUZ50B Overview
BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min.
BUZ50B datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BUZ50B |
|---|---|
| Datasheet | BUZ50B_SiemensSemiconductorGroup.pdf |
| File Size | 167.28 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
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BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min.
View BUZ50B-220M datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BUZ50B-220M | MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS | Seme LAB |
| ETC | BUZ50A | HIGH VOLTAGE POWER MOSFET | ETC |
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BUZ50A-220M | MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS | Seme LAB |
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ50A | Power Transistor |
| BUZ50C | Power Transistor |
| BUZ51 | Power Transistor |
| BUZ53 | Power Transistor |
| BUZ53C | Power Transistor |
| BUZ58 | Power Transistor |
| BUZ58A | Power Transistor |
| BUZ10 | Power Transistor |
| BUZ100 | Power Transistor |
| BUZ100L | Power Transistor |