BUZ50B Description
BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min.
BUZ50B is Power Transistor manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BUZ50B-220M | MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
| ETC Unknown Manufacturer |
BUZ50A | HIGH VOLTAGE POWER MOSFET |
Seme LAB |
BUZ50A-220M | MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. BUZ 50 B , at Tj = 25°C, unless otherwise specified Parameter Symbol min.