BUZ50C Datasheet | Siemens Semiconductor Group

.. BUZ 50 C SIPMOS ® Power Transistor - N channel - Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 C 1000 V 2.3 A RDS(on) 6Ω Package TO-220 AB Ordering Code C67078-A1307-A5 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.3 TC = 25 °C Pulsed drain current IDpuls TC = 25 °C m .co Gate source voltage Power dissipation VGS Ptot ± 20 78 TC = 25 °C 4U Operating temperature eet Tj Tstg Rth JC Rth JA -55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W Storage temperature Thermal resistance, chip to ambient ww w.D ata DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC...