SGT25U120FD1P7 Datasheet | Silan Microelectronics

Silan Microelectronics SGT25U120FD1P7_Datasheet 25A, 1200V FIELD STOP IGBT DESCRIPTION The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, Features low conduction loss and switching loss. This device is applicable to UPS, SMPS, and PFC fields. Features - 25A, 1200V, VCE(sat)(typ.)=2.2V@IC=25A - Low conduction loss - Ultra-fast switching - High breakdown voltage C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT 25 U 120 F D IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V 1 P7 Package P7 : TO-247-3L 1,2,3… :...