SVD3205F Description
SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. It can be widely used in electronic...
SVD3205F Key Features
- 110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability