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SVD3205T - 55V N-CHANNEL MOSFET

General Description

SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology.

Key Features

  • 110A, 55V, RDS(on)(typ. )=7.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 123 TO-220-3L 123 TO-220F-3L.

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Datasheet Details

Part number SVD3205T
Manufacturer Silan Microelectronics
File Size 243.43 KB
Description 55V N-CHANNEL MOSFET
Datasheet download datasheet SVD3205T Datasheet

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Silan Microelectronics SVD3205T(F)(S)_Datasheet 110A, 55V N-CHANNEL MOSFET DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS. 2 1 1 3 3 TO-263-2L 1.Gate 2.Drain 3.Source FEATURES  110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 123 TO-220-3L 123 TO-220F-3L ORDERING INFORMATION Part No.