SVD3205T Datasheet | Silan Microelectronics

Silan Microelectronics SVD3205T(F)(S)_Datasheet 110A, 55V N-CHANNEL MOSFET DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. It can be widely used in electronic ballast, low-power SWPS. 1 3 TO-263-2L 1.Gate 2.Drain 3.Source Features - 110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt...