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SVD3205S - 55V N-CHANNEL MOSFET

Download the SVD3205S datasheet PDF. This datasheet also covers the SVD3205T variant, as both devices belong to the same 55v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology.

Key Features

  • 110A, 55V, RDS(on)(typ. )=7.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 123 TO-220-3L 123 TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD3205T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD3205S
Manufacturer Silan Microelectronics
File Size 243.43 KB
Description 55V N-CHANNEL MOSFET
Datasheet download datasheet SVD3205S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVD3205T(F)(S)_Datasheet 110A, 55V N-CHANNEL MOSFET DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS. 2 1 1 3 3 TO-263-2L 1.Gate 2.Drain 3.Source FEATURES  110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 123 TO-220-3L 123 TO-220F-3L ORDERING INFORMATION Part No.