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Silan Microelectronics
SVD3205T(F)(S)_Datasheet
110A, 55V N-CHANNEL MOSFET
DESCRIPTION
SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS.
2
1
1 3
3
TO-263-2L
1.Gate 2.Drain 3.Source
FEATURES
110A, 55V, RDS(on)(typ.)=7.5m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
123
TO-220-3L
123
TO-220F-3L
ORDERING INFORMATION
Part No.