SVF13N60AF Datasheet | Silan Microelectronics

SVF13N60AF_Datasheet 13A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N60AF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 13A,600V,RDS(on(typ)=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF13N60AF Package TO-220F-3L Marking SVF13N60AF Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:1.1 2011.09.13 Page 1 of 7 SVF13N60AF_Datasheet...