SVG105R4NKL Datasheet | Silan Microelectronics

Silan Microelectronics SVG105R4NT(S)(KL)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG105R4NT(S)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 120A, 100V, RDS(on)(typ.)= 5.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262L-3L TO-263-2L 1 2 3 TO-220-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 100 2.0~4.0 5.4 120 64 Unit V V m A n C ORDERING INFORMATION Part...