SVG105R5NT Datasheet | Silan Microelectronics

Silan Microelectronics SVG105R5NT_Datasheet 120A, 98V N-CHANNEL MOSFET DESCRIPTION SVG105R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 120A, 98V, RDS(on)(typ.)=4.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L ORDERING INFORMATION Part No. SVG105R5NT Package TO-220-3L Marking 105R5NT Hazardous Substance Control Pb free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.0 Page 1 of 8 Silan Microelectronics SVG105R5NT_Datasheet...