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SVGP107R0NL5

Manufacturer: Silan Microelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

SVGP107R0NL5 datasheet preview

Datasheet Details

Part number SVGP107R0NL5
Datasheet SVGP107R0NL5 SVGP107R0NL5-SilanMicroelectronics Datasheet (PDF)
File Size 395.21 KB
Manufacturer Silan Microelectronics
Description 100V N-CHANNEL MOSFET
SVGP107R0NL5 page 2 SVGP107R0NL5 page 3

SVGP107R0NL5 Overview

SVGP107R0NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems.

SVGP107R0NL5 Key Features

  • 90A, 100V, RDS(on)(typ.)=6.3m@VGS=10V
  • Low gate charge
  • Low Crss
  • Fast switching
  • Improved dv/dt capability
  • 100% avalanche tested
  • Pb-free lead plating
  • RoHS pliant
Silan Microelectronics logo - Manufacturer

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