SVGP107R0NL5 Description
SVGP107R0NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems.
SVGP107R0NL5 Key Features
- 90A, 100V, RDS(on)(typ.)=6.3m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant