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SVSP11N70DD2 - 700V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP11N70DD2 datasheet PDF. This datasheet also covers the SVSP11N70FD2-SilanMicroelectronics variant, as both devices belong to the same 700v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 11A,700V, RDS(on)(typ. )=0.37@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251J-3L 1 3 TO-263-2L 12 3 TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP11N70FD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP11N70DD2
Manufacturer Silan Microelectronics
File Size 436.22 KB
Description 700V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP11N70DD2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP11N70F/FJH/D/MJ/SD2_Datasheet 11A, 700V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  11A,700V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.