SVSP11N70MJD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP11N70F/FJH/D/MJ/SD2_Datasheet 11A, 700V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. Features - 11A,700V, RDS(on)(typ.)=0.37@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Enhanced avalanche capability - Extreme dv/dt rated - High peak current capability TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251J-3L TO-263-2L 12 3 TO-220F-3L ORDERING INFORMATION Part No. SVSP11N70FD2 SVSP11N70FJHD2 SVSP11N70DD2TR SVSP11N70MJD2 SVSP11N70SD2 Package TO-220F-3L TO-220FJH-3L TO-252-2L TO-251J-3L TO-263-2L Marking P11N70FD2 P11N70FJH P11N70D P11N70MJD2 P11N70SD2 Hazardous substance control Halogen free Halogen free Halogen free Halogen free Halogen free Packing Type Tube Tube Tape & Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of...