Datasheet Details
| Part number | SVSP11N70FJHD2 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 436.22 KB |
| Description | 700V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 SVSP11N70FJHD2 Datasheet
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General Description
SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 11A,700V, RDS(on)(typ. )=0.37@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Enhanced avalanche capability.
- Extreme dv/dt rated.
- High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251J-3L 1 3 TO-263-2L 12 3 TO-220F-3L.