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SVSP24N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP24N60FJDD2 datasheet PDF. This datasheet also covers the SVSP24N60FJDD2-SilanMicroelectronics variant, as both devices belong to the same 600v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220FJD-3L 12 3 TO-220-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP24N60FJDD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP24N60FJDD2
Manufacturer Silan Microelectronics
File Size 379.66 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP24N60FJDD2 Datasheet

Other Datasheets by Silan Microelectronics

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SVSP20N60KD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP20N60P7D2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP20N60PND2 600V SUPER JUNCTION MOS POWER TRANSISTOR
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SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP24N60FJD(T)D2_Datasheet 24A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. FEATURES  24A, 600V, RDS(on)(typ.)=0.14@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 3 1.Gate 2.Drain 3.