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SVSP24NF60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP24NF60FJDD2 datasheet PDF. This datasheet also covers the SVSP24NF60FJDD2-SilanMicroelectronics variant, as both devices belong to the same 600v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP24NF60FJDD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 24A,600V, RDS(on)(typ. )=0.15@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220FJD-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP24NF60FJDD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP24NF60FJDD2
Manufacturer Silan Microelectronics
File Size 288.79 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP24NF60FJDD2 Datasheet

Other Datasheets by Silan Microelectronics

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SVSP24N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
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SVSP20N60KD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
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SVSP20N60PND2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP20N60SD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
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SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP24NF60FJDD2_Datasheet 24A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP24NF60FJDD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  24A,600V, RDS(on)(typ.)=0.