SVSP24NF60FJDD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP24NF60FJDD2_Datasheet 24A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP24NF60FJDD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source Features - 24A,600V, RDS(on)(typ.)=0.15@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 123 TO-220FJD-3L NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS denote Multilayer epitaxial process SVSP XNEXXXXXX Process Version, P denotes PASSIVATION Nominal current, using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel Special Features indication, May be omitted. Example: E denotes embedded ESD structure Process breakdown logo D2: second generation process, EMI version; E2: second generation, fast switching version Packageinformation.Examp:F:TO-220F. Specification mark, distinguish different gate oxygen thickness and different versions of products. It is usually default. Nominal Voltage, using 2 digits Example:60 denotes 600V,65 denotes 650V. ORDERING INFORMATION Part No. SVSP24NF60FJDD2 Package...