SVSP24N60TD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP24N60FJD(T)D2_Datasheet 24A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. Features - 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220FJD-3L 12 3 TO-220-3L ORDERING INFORMATION Part No. SVSP24N60FJDD2 SVSP24N60TD2 Package TO-220FJD-3L TO-220-3L Marking P24N60FJD P24N60TD2 Hazardous Substance Control Halogen free Halogen free Packing Type Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.6 Page 1 of 10 Silan Microelectronics SVSP24N60FJD(T)D2_Datasheet...