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SGTP75V120FDB2PW4 - 1200V FIELD STOP IGBT

This page provides the datasheet information for the SGTP75V120FDB2PW4, a member of the SGTP75V120FDB2PW4-SilanSemiconductors 1200V FIELD STOP IGBT family.

Description

The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP75V120FDB2PW4

Datasheet Details

Part number SGTP75V120FDB2PW4
Manufacturer Silan Semiconductors
File Size 526.20 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGTP75V120FDB2PW4 Datasheet
Additional preview pages of the SGTP75V120FDB2PW4 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP75V120FDB2PW4_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 1200V, VCE(sat)(typ.)=1.9V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 1 4 G 3 2 E 12 3 4 TO-247P-4L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A SGT P 75 V 120 F D B 2 PW4 N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V Package PW4: TO-247P-4L 1,2,3 : Version No.
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