SGTP75V120FDB2PW4 Datasheet | Silan Semiconductors

DESCRIPTION The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES - 75A, 1200V, VCE(sat)(typ.)=1.9V@IC=75A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax.=175C C 1 4 G 12 3 4 TO-247P-4L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A SGT P 75 V 120 F D B 2 PW4 N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V Package PW4: TO-247P-4L 1,2,3 : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT L : Ultra low switching, remended frequency ~2KHz Q : Low switching, remended frequency 2~20KHz S : Standard frequency, remended frequency 5~40KHz F : Fast switching, remended frequency10~60KHz UF : Ultra fast switching, remended frequency 40KHz~ ORDERING INFORMATION Part No. SGTP75V120FDB2PW4 Package TO-247P-4L Marking P75V120FDB2 Hazardous Substance Control Halogen free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.0 Page 1 of 12 Silan Microelectronics SGTP75V120FDB2PW4_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25°C) Characteristics Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-Emitter Voltage (tp≤10µs，D<0.010)...