SGTP75V65FDB1P4B Datasheet | Silan Semiconductors

DESCRIPTION The SGTP75V65FDB1P4B field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES - 75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A - Low conduction loss - Fast switching - High input impedance - TJmax=175C C 1 4 G TO-247B-4L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 65:650V 120: 1200V SGT P 75 V 65 F D B 1 P4B Package P4B : TO-247B-4L 1,2,3 : Version No. Blank: Standard diode M : Standard diode, full range R : Rapid diode B : Rapid diode, full range S : Ultra soft diode, full range D : packaged with fast recovery diode R : RC IGBT Blank: single IGBT C : Sic L : Ultra low switching，remended frequency ~2KHz Q : Low switching，remended frequency 2~20KHz S : Standard frequency ，remended frequency 5~40KHz F : Fast switching，remended frequency 10~60KHz UF : Ultra fast switching，remended frequency 40KHz~ I: Igniter ORDERING INFORMATION Part No. SGTP75V65FDB1P4B Package TO-247B-4L Marking P75V65FDB1 Hazardous Substance Control Halogen free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.0 Page 1 of 12 Silan Microelectronics SGTP75V65FDB1P4B_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C, UNLESS OTHERWISE NOTED) Characteristics Collector-emitter Voltage Gate-emitter Voltage Transient Gate-emitter Voltage (tp≤10µs, D<0.010) Collector...