SGTP75V65FDB1P7 Description
The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,.
SGTP75V65FDB1P7 Key Features
- 75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A
- Low conduction loss
- Ultra-fast switching
- High input impedance
- TJmax.=175C
SGTP75V65FDB1P7 is 650V FIELD STOP IGBT manufactured by Silan Semiconductors.
| Part Number | Description |
|---|---|
| SGTP75V65FDB1P4B | 650V FIELD STOP IGBT |
| SGTP75V65SDB1P7 | 650V FIELD STOP IGBT |
| SGTP75V65SDS1P7 | 650V FIELD STOP IGBT |
| SGTP75V120FDB2PW | 1200V FIELD STOP IGBT |
| SGTP75V120FDB2PW4 | 1200V FIELD STOP IGBT |
The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,.