SGTP75V65FDB1P7 Datasheet | Silan Semiconductors

DESCRIPTION The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES - 75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT P 75 V 65 F D B 1 P7 IGBT series Technical grade Current, 75: 75A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 65: 650V 120: 1200V Package P7 : TO-247-3L 1,2,3 : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT Empty:Single IGBT chip C : Si C diode L : Ultra low switching, remended frequency ~2KHz Q : Low switching, remended frequency2~20KHz S : Standard frequency, remended frequency5~40KHz F : Fast switching, remended frequency10~60KHz UF : Ultra fast switching, remended frequency 40KHz~ I : IGNITION ORDERING INFORMATION Part No. SGTP75V65FDB1P7 Package TO-247-3L Marking P75V65FDB1 Hazardous Substance Control Halogen free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 12 Silan Microelectronics SGTP75V65FDB1P7_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25°C) Characteristics Collector-emitter Voltage Gate-emitter Voltage Transient Gate-Emitter Volatge (tp≤10µs,...