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SGTP75V65FDB1P7 - 650V FIELD STOP IGBT

This page provides the datasheet information for the SGTP75V65FDB1P7, a member of the SGTP75V65FDB1P7-SilanSemiconductors 650V FIELD STOP IGBT family.

Description

The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP75V65FDB1P7

Datasheet Details

Part number SGTP75V65FDB1P7
Manufacturer Silan Semiconductors
File Size 453.82 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP75V65FDB1P7 Datasheet
Additional preview pages of the SGTP75V65FDB1P7 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT P 75 V 65 F D B 1 P7 IGBT series Technical grade Current, 75: 75A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 65: 650V 120: 1200V Package P7 : TO-247-3L 1,2,3 : Version No.
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