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SGTP75V65SDS1P7 - 650V FIELD STOP IGBT

General Description

The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V technology,

Key Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet Details

Part number SGTP75V65SDS1P7
Manufacturer Silan Semiconductors
File Size 462.61 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP75V65SDS1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGTP75V65SDS1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.42V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 75:750V 120: 1200V SGT P 75 V 65 S D S 1 P7 Package PW: TO-247-3L 1,2,3 : Version No.