SGTP75V65SDS1P7 Datasheet | Silan Semiconductors

DESCRIPTION The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES - 75A, 650V, VCE(sat)(typ.)=1.42V@IC=75A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 75:750V 120: 1200V SGT P 75 V 65 S D S 1 P7 Package PW: TO-247-3L 1,2,3 : Version No. Blank: Standard diode M : Standard diode, full range R : Rapid diode B : Rapid diode, full range S : Ultra soft diode, full range D : packaged with fast recovery diode R : RC IGBT Blank: single IGBT C : Sic L : Ultra low switching，remended frequency ~2KHz Q : Low switching，remended frequency 2~20KHz S : Standard frequency ，remended frequency 5~40KHz F : Fast switching，remended frequency 10~60KHz UF : Ultra fast switching，remended frequency 40KHz~ I: Igniter ORDERING INFORMATION Part No. SGTP75V65SDS1P7 Package TO-247-3L Marking P75V65SDS1 Hazardous Substance Control Halogen free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.2 Page 1 of 12 Silan Microelectronics SGTP75V65SDS1P7_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25°C) Characteristics Symbol Ratings Unit Collector - Emitter...