SSM2605GY Datasheet | Silicon Standard

DESCRIPTION SOT-26 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness device. The SOT-26 package is universally used for all mercial- industrial applications. BVDSS RDS(ON) ID -30V 80mΩ - 4A Pb-free; Ro HS-pliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -30 ±20 -4 -3.3 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃...