SST12LP14C Datasheet | Silicon Storage Technology

2.4 GHz High-Power, High-Gain Power Amplifier SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifications Features : - High Gain: - Typically 32 d B gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power: - >26 d Bm P1d B - Please refer to “Absolute Maximum Stress Ratings” on page 4 - Meets 802.11g OFDM ACPR requirement up to 23 d Bm - ~4% added EVM up to 20 d Bm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 22.5 d Bm High power-added efficiency/Low operating current for both 802.11b/g applications - ~29%/205 m A @ POUT = 23 d Bm for 802.11g - ~27%/195 m A @ POUT = 22.5 d Bm for 802.11b Single-pin low IREF power-up/-down control - IREF <2 m A Low idle current - ~100 m A ICQ High-speed power-up/-down - Turn on/off time (10%- 90%) <100 ns - Typical power-up/-down delay with driver delay included <200 ns - High temperature stability - ~1 d B power variation between 0°C to +85°C - Low shut-down current (< 0.1 µA) - Excellent On-chip power detection - <+/- 0.5d B variation between 0°C to +85°C - <+/- 0.3d B variation Ch1 through Ch14 - 20 d B dynamic range on-chip power detection - Simple input/output matching - Packages available - 16-contact VQFN - 3mm x 3mm - All non-Pb (lead-free) devices are Ro HS...