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J423 - monolithic dual n-channel JFET

This page provides the datasheet information for the J423, a member of the J421 monolithic dual n-channel JFET family.

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Datasheet Details

Part number J423
Manufacturer Siliconix
File Size 118.58 KB
Description monolithic dual n-channel JFET
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monolithic dual H n-channel JFETs Performance Curves NQT See Sedion 4 designed for • • • • Very High Input Impedance DiHerential Amplifiers Electrometers • Impedance Converters BENEFITS • High Input Impedance IG = 0.1 pA Maximum (U421-3) • High Gain gfs = 140 !,mho Minimum@ ID= 3O I'A (U421·3) • Low Power Supply Operation VGS(off) = 2 V Maximum (U421·3) • Minimum System Error and Calibration 10 mV Maximum Offset 90 dB Minimum CMRR (U421, U424) ABSOLUTE MAXIMUM RATINGS (25°C) TO·78 See Section 5 Gate-to-Gate Voltage Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), TA = 25°C (Derate 3.2 mW;oC to 150°C) . - Total Device Dissipation, TA = 25°C ! (Derate 6.
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