• Part: J421
  • Description: monolithic dual n-channel JFET
  • Manufacturer: Siliconix
  • Size: 118.58 KB
Download J421 Datasheet PDF
Siliconix
J421
monolithic dual H n-channel JFETs Performance Curves NQT See Sedion 4 designed for - - - - Very High Input Impedance Di Herential Amplifiers Electrometers - Impedance Converters BENEFITS - High Input Impedance IG = 0.1 p A Maximum (U421-3) - High Gain gfs = 140 !,mho Minimum@ ID= 3O I'A (U421- 3) - Low Power Supply Operation VGS(off) = 2 V Maximum (U421- 3) - Minimum System Error and Calibration 10 m V Maximum Offset 90 d B Minimum CMRR (U421, U424) ABSOLUTE MAXIMUM RATINGS (25°C) TO- 78 See Section 5 Gate-to-Gate Voltage Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), TA = 25°C (Derate 3.2 m W;o C to 150°C) . - Total Device Dissipation, TA = 25°C ! (Derate 6.0 m W;o C to 150°C) Storage Temperature Range ±40 V -40 V 10m A 400m W 750 m W -65 to +150°C ~G, Pf N3 5, D, PIN 6 G, PIN 7 5, Case Pin 4 PIN 1 PIN 5 5, c 4 a S D2 o~ G1 300 G2 '0 ' 5, 01 10 A '2 ~, G, ELECTRICAL CHARACTERISTICS (25°C unless otherwise...