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VN2020L - N-Channel Enhancement-Mode MOS Transistors

Download the VN2020L datasheet PDF. This datasheet also covers the VN2010L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN2010L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN2020L
Manufacturer Siliconix
File Size 93.08 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN2020L Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN2010L N-Channel Enhancement-Mode MOS Transistors
VN2222KM N-Channel Enhancement-Mode MOS Transistors
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VN2406B N-Channel Enhancement-Mode MOS Transistors
VN2406D N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
.r'Siliconix ~ incorporated VN2010 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (Il) (A) PACKAGE VN2010L 200 10 0.19 TO-92 VN2020L 200 20 0.08 TO-92 Performance Curves: VNDQ20 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2010L VN2020L Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C T A = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj. Tstg h 200 200 ±30 0.19 ±30 0.08 0.12 0.055 0.8 0.8 0.32 0.5 0.8 0.