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VN2020L - N-Channel Enhancement-Mode MOS Transistors

This page provides the datasheet information for the VN2020L, a member of the VN2010L N-Channel Enhancement-Mode MOS Transistors family.

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Datasheet Details

Part number VN2020L
Manufacturer Siliconix
File Size 93.08 KB
Description N-Channel Enhancement-Mode MOS Transistors
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.r'Siliconix ~ incorporated VN2010 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (Il) (A) PACKAGE VN2010L 200 10 0.19 TO-92 VN2020L 200 20 0.08 TO-92 Performance Curves: VNDQ20 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN2010L VN2020L Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C T A = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj. Tstg h 200 200 ±30 0.19 ±30 0.08 0.12 0.055 0.8 0.8 0.32 0.5 0.8 0.
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