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VNDQ06 - N-Channel Enhancement-Mode MOSFET

Key Features

  • Low rOS(on) < 3.5 n TYPE Single Quad.

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Datasheet Details

Part number VNDQ06
Manufacturer Siliconix
File Size 255.54 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDQ06 Datasheet

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VNDQ03 N-Channel Enhancement-Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNDQ06 .:rSiliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • Low rOS(on) < 3.5 n TYPE Single Quad PACKAGE DEVICE TO-205AD • 2N6659, 2N6660 VN67AB TO-220SD • VN40AFD, VN46AFD, VN66AFD, VN67AFD TO-220 • VN66AD, VN67AD 14-Pin Plastic • VQ1004J 14-Pin Dual-In- Line • VQ1004P Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.251) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) 0.010 (0.254) T 0.038 (0.965) 1 7-128 ~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics 2.0 Vas = 10 V TJ=25°C 7V 1.6 f '/1.2 10 rr(A) 0.8 0.4 6V 5V 4V 3V 0 0 10 20 30 40 50 Vos (V) VNDQ06 Ohmic Region Characteristics 2.0 VVas = 10 V V'svJ /;" / t/'1.6 TJ = 2~OC I J / 1.