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g Siliconix incorporated
VNDB24
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
o Switching ., Amplification
FEATURES
o High Breakdown> 240 V
• Low rDS(on) < 6 n
TYPE Single
PACKAGE
DEVICE
TO-205AD • VN1706B, VN2406B
TO-220 GI VN1706D, VN2406D
TO-92
101 VN1706L, VN2406L
TO-237
• VN1706M, VN1710M, VN2406M
Chip
o Available as above specifications
GEOMETRY DIAGRAM
t
(00..200038)
7-103
VNDB24
TYPICAL CHARACTERISTICS
Output Characteristics
2.0
~~ I
I
V'VGs =10V
1.6
f1.2
10
r(mA) 0.8
5V 4V
3V
0.4
2'V
o o 20 40 60 80
Vos (V)
100
..rSiliconix
~ incorporated
Ohmic Region Characteristics
1.0 TJ = 25°C
VGs= 10J-
, ~0.8 ,/
0.6
L L ~~
/ ~V
I
10 (A) 0.4
L.~
~ ~~
3.0 V
J
~0.2 r~
~
~
2.5 V 2.
VNDB24 Datasheet
