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VNDP06 - N-Channel Enhancement-Mode MOSFET

Key Features

  • Protection Diode.
  • Low rDS(on) < 10 n TYPE Single IPAC- KAGE DEV-IC-F- TO-206AC.
  • VN10KE TO-92.
  • VN0610L, VN2222L TO-237.
  • VN10KM, VN2222KM Chip.
  • Available as above specifications.

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Datasheet Details

Part number VNDP06
Manufacturer Siliconix
File Size 243.04 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDP06 Datasheet

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Other Datasheets by Siliconix

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VNDQ06 N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNDP06 N·Channel Enhancement·Mode MOSFET tcrSiliconix ~ incorporated DESIGNED FOR: = S'vVitching • Amplification FEATURES • Protection Diode • Low rDS(on) < 10 n TYPE Single IPAC- KAGE DEV-IC-F- TO-206AC • VN10KE TO-92 • VN0610L, VN2222L TO-237 • VN10KM, VN2222KM Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad ~ (0.224) 0.0063 (0.16) Source Pad 0.0081 (0.206) 0.0059 (0.15) 7-118 T 0.038 (0.965) 1 . z .~SilicDnix incorporated TYPICAL CHARACTERISTICS 1.25 1.00 0.75 10 (A) 0.50 0.25 Output Characteristics 7V 6V 5V 4V 3V 2V 24 68 Vos (V) 10 VNDP06 Ohmic Region Characteristics 1.0 TJ = 25°C Vas = 10 V/ 6Y, / V5V 0.8 L /' ~ v.. '/ '"0.6 1'..... ~ 11 4V 10 (A) 0.4 /,~ /'~ ~V ,0.2 Vi.