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VNDN24 - N-Channel Enhancement-Mode MOSFET

Key Features

  • High Breakdown > 240 V.
  • Available in Surface Mount SOT-23 TYPE Single.

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Datasheet Details

Part number VNDN24
Manufacturer Siliconix
File Size 207.98 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDN24 Datasheet

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VNDB24 N-Channel Enhancement-Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNDN24 ~Siliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • High Breakdown > 240 V • Available in Surface Mount SOT-23 TYPE Single PACKAGE DEVICE To-92 • 2N7007 SOT-23 • 2N7001 Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.0038 (0.0965) 0.0063 (0.1600) Source Pad 0.0049 (0.124) 0.0049 (0.124) T 0.027 (0.686) liiiiiiiiiiiiiiiiiiill 1 - 0 - - - 0.027 _ _~'I (0.686) 7-108 fCTSiliconix ~ incorporated TYPICAL CHARACTERISTICS 200 160 120 10 (mA) 80 40 Output Characteristics f I/5V ;--VGs =10V rV I 4V 3.5 V 3V 2V o o 25 50 75 100 125 VOS (V) VNDN24 Ohmic Region Characteristics 200 TJ = 25°C Vos-10 V/, 160 120 10 (mA) 80 40 -./V .