VNDO50 - N-Channel Enhancement-Mode MOSFET

Siliconix

Key Features

High Breakdown 450 V.
Available in Surface Mount Package SOT-23 TYPE Single.

VNDO50 n-channel enhancement-mode mosfet by Siliconix - Datasheet Preview

Datasheet Details

Part number	VNDO50
Manufacturer	Siliconix
File Size	219.86 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	VNDO50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.rSiliconix .LJI incorporated VND050 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching o Spike Protection FEATURES • High Breakdown 450 V • Available in Surface Mount Package SOT-23 TYPE Single PACKAGE DEVICE TO-92 • VN45350L VN50300L SOT-23 • VN45350T VN50300T Chip • Available as above specifications GEOMETRY DIAGRAM VND050 Source Pad 0.0034 (0.0863) 0.0043 (0.1092) I- 0.028 (0.711) T 0.026 (0.660) 0.0041 (0.1041) 0.0043 (0.1092) Gate Pad • 7-113 VND050 TYPICAL CHARACTERISTICS 10 (rnA) Output Characteristics 100 VGS - 20 V "" , ~BO ~~ ,l60 40 V 10 V..!!... 9V BV 7V 6V 20 5V 4V o o 40 BO 120 160 200 Vos (V) ~.-r'Sinicloircpoornatiexd 10 (rnA) Ohmic Region Characteristics Y20 VGS= 10V II I 16 TJ = 25°C VA 1~ 6V 12 ~ .... ~ J..