VNDQ12 - N-Channel Enhancement-Mode MOSFET

Siliconix

Key Features

Low rOSlon) < 4.5 n TYPE Single.

VNDQ12 n-channel enhancement-mode mosfet by Siliconix - Datasheet Preview

Datasheet Details

Part number	VNDQ12
Manufacturer	Siliconix
File Size	253.75 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	VNDQ12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNDQ12 .rY"Siliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • Low rOSlon) < 4.5 n TYPE Single PACKAGE DEVICE TO-205AD • VN1206B TO-220 • VN1206D TO-237 • VN1206M, VN1210M TO-S2 • VN1206L, VN1210L Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) .-JW..Q. (0.254) 7-138 T 0.038 (0.965) 1 ~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics 2.0 rr~ VGS - 10 V 1.6 V1.2 10 (A) O.B 7V 6V 5V 4V 0.4 3V 2V 0 0 20 40 60 BO Vos (V) 100 VNDQ12 Ohmic Region Characteristics 1000 VVGS= 10V./ BOO 600 10 (mA) 400 6V V / / / ./ ...... ....... / / [.? ./.'...