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VNDQ20 - N-Channel Enhancement-Mode MOSFET

Key Features

  • High Breakdown> 200 V.
  • Low rDSlon) < 10 n TYPE Single.

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Datasheet Details

Part number VNDQ20
Manufacturer Siliconix
File Size 215.80 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDQ20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.:r-Siliconix ~ incorporated VNDQ20 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • High Breakdown> 200 V • Low rDSlon) < 10 n TYPE Single PACKAGE DEVICE TO-92 • BS107 VN2010L, VN2020L Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) -lL..1Q. (0.254) T 0.038 (0.965) 1 7-143 VNDQ20 TYPICAL CHARACTERISTICS Output Characteristics 1.0 ~I :--VGS ; 10 V O.B l [0.6 10 r'-(A) 0.4 Y 0.2 "o o 20 40 60 VOS (V) SV 4V 3.S V 3V 12 .S V 2V BO 100 ~Siliconix ~ incorporated Ohmic Region Characteristics O.S TJ ; 2SoC 0.4 ~VGS - 10 V ~/ "L:V 4V ~~ ~ rsv0.3 ~~ h~ I 10 (A) 0.2 , ~0.1 ~ ~~ ~ ..,...