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SSF2610E Datasheet MOSFET

Manufacturer: Silikron Semiconductor

Overview: DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

General Description

The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

SSF2610E GENERAL

Key Features

  • VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating:2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

SSF2610E Distributor