Datasheet Details
| Part number | SSF2610E |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 320.23 KB |
| Description | MOSFET |
| Datasheet |
 SSF2610E Datasheet
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General Description
The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
Key Features
- VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating：2000V HBM.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package Schematic diagram Marking and pin Assignment.