SSF3904A Datasheet | Silikron Semiconductor

Features and Benefits: TO263  - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature SSF3904A    Marking and pin Assignment  Schematic diagram        Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1m H② Avalanche Current @ L=0.1m H② Operating Junction and Storage Temperature Range Max. 120 90 480 100 0.55 30 ± 20 320 80 -55 to + 175 Units W W/°C V V m J A °C ©Silikron Semiconductor CO., LTD. 2014.03.01 .silikron.  Version: 1.0 page 1 of 8                                  SSF3904A  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 0.9 62 40 Units ℃/W ℃/W...