SSF6010A Datasheet | Silikron Semiconductor

Description : The SSF6010A is a new generation of middle voltage and high current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house. Application: - Power switching application ID =75A BV=60V Rdson=8mΩ (typ.) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range SSF6010A TOP View (D2PAK) Max. 75 45 300 144 0.74 ±20 220 TBD - 55 to +175 Units W W/ Cْ V m J ْC Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. - - Typ. 1.04 - Max. - 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter BVDSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage gfs Forward transconductance IDSS Drain-to-Source leakage...