SSPL1010 Datasheet | Silikron Semiconductor

Features and Benefits: TO220 - Advanced Process Technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature Marking and pin Assignment Schematic diagram Description : These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.14m H Avalanche Current @ L=0.14m H Operating Junction and Storage Temperature Range Max. 88 ① 63 ① 352 245 1.63 100 ±20 700 100 -55 to +175 Units W W/°C V V m J A °C ©Silikron Semiconductor CO.,LTD. 2011.12.01 .silikron. Version : 1.0 page 1 of 8 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s)④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 0.61 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate...