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SSPL1010 Datasheet Schottky Barrier Rectifier

Manufacturer: Silikron Semiconductor

Overview: Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.

General Description

: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.14mH Avalanche Current @ L=0.14mH Operating Junction and Storage Temperature Range Max.

Key Features

  • TO220.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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