Datasheet4U Logo Datasheet4U.com

SSPL1022 - N-Channel enhancement mode power field effect transistors

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet Details

Part number SSPL1022
Manufacturer Silikron Semiconductor
File Size 333.12 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSPL1022 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSPL2015 N-Channel MOSFET GOOD-ARK
SSPL2090 N-Channel MOSFET GOOD-ARK
SSPL4004 N-Channel MOSFET GOOD-ARK
SSPL5505 N-Channel MOSFET GOOD-ARK
SSPL5508 N-Channel MOSFET GOOD-ARK

Other Datasheets by Silikron Semiconductor

Part Number Description
SSPL1010 Schottky Barrier Rectifier
SSPL1042 N-Channel enhancement mode power field effect transistors
SSPL1090 N-Channel enhancement mode power field effect transistors
SSPL2015 N-Channel enhancement mode power field effect transistors
SSPL2015D N-Channel enhancement mode power field effect transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
                                 Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.) ID 57A Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature TO220  SSPL1022    Marking and pin Assignment  Schematic diagram        Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.