SII75N06 Datasheet | Sirectifier Semiconductors

NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. TC = 25o C, unless otherwise specified Conditions Values 600 100(75) 150 355 _ +20 75 150 450 2500 Absolute Maximum Ratings Symbol Units V A A W V A A As IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(75)o C ICRM TC= 75o C, t P =1ms Ptot TC= 25o C, Tvj= 150o C VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 t P =1ms VR=0V, t P =10ms; TVj=125o C It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.5m A ICES VGE = 0; VCE = 600V, Tj = 25(125)o C IGES VCE=0; VGE=20V VCE(sat) Cies Cres IC =75A; VGE = 15V; Tj = 25(125)o C under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25o C, unless otherwise specified min. 4.5 typ. 5.5 1(1000) max. 6.5 500 400 Units V u A n A V n F n H A 1.95(2.2) 2.45(-) 3.3 0.3 40 340 LCE o .. Isc t P 10u S, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 75A tr RGon = RGoff =3.0 , , Tj = 25(125)o C td(off) VGE = ± 15V tf 63(65) 22(25) 155(170) 20(35) 0.7(2.4) 1.2 0.35 ns ns ns ns m J m K/W Eon(Eoff) RCC'+EE' Tj = 25(125)o C, LS = 30n H Rth JC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 75A; VGE = 0V; Tj = 25(125)o C IRM IF = 75A; Tj = 25(125)o C Qr -di/dt = 3000A/us Erec VGE = -10V, VR=300V Rth JC Rth CK TVJ TVJM Tstg 1.25(1.2) 95(115) 5.1(7.9) -(2.3) 0.03 -40...+125 150 -40...+125 1.6(-) V A u C m J K/W o Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 160 Nm Nm g Sirectifier NPT IGBT Modules .. Sirectifier NPT IGBT...