SII75N12 Datasheet | Sirectifier Semiconductors

NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Rth JC Rth JCD o TC = 25o C, unless otherwise specified Conditions Values 1200 105(75) 210(150) _ +20 625 _ 40...+125(150) 2500 _ < 0.2 o Units V A A V TC= 25(80) C TC= 25(80)o C, t P =1ms _ Tstg TOPERATION < AC, 1min K/W _ 0.5 < Sirectifier NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =3m A ICES VGE = 0; VCE = 1200V; Tj = 25(125)o C IGES VGE = 20V, VCE = 0 VCE(sat) IC =75A; VGE = 15V; Tj = 25(125)o C; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres .. gfs VCE=20V, IC=75A Switching Characteristics td(on) VCC = 600V, IC = 75A tr RGon = RGoff =15 , Tj = 125o C td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 75A, VGE = 0V, Tj = 25(125)o C trr IF =75A, VR=_ 600V, VGE=0V,di/dt= _900A/us, Tj = 125o C _ IF = 75A, VGE = 0V, VR= 600V Qrr _ di/dt= 900A/us, Tj = 25(125)o C Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25o C, unless otherwise specified min. 4.5 typ. 5.5 1(4.5) 2.5(3.1) 5.5 0.8 0.3 31 max. 6.5 1.5 320 3(3.7) Units V m A n A V n F S 30 70 450 70 2.3(1.8) 0.125 3.2(12) 60 140 600 100 2.8 ns V us u C Mechanical Data 5 5 160 Nm Nm g Sirectifier NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 650 W 550 Ptot 500 450 400 350 10 1 1 ms Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A IC t = 19.0µs p 10 2 100 µs .. 300 250 200 10 ms 10 0 150 100 50 0 0 20 40 60 80 100 120 °C 160 10 -1 0 10...