SII75S12 Datasheet | Sirectifier Semiconductors

SPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25o C, unless otherwise specified Values Units V A A o TC= 25(80) C TC= 25(80)o C, t P =1ms _ Tstg TOPERATION < AC, 1min o 100(70) 200(140) _ +20 _ 40...+150(125) 4000 75(50) 200(140) 550 Visol Inverse Diode IF=-IC TC= 25(80)o C TC= 25(80)o C, t P =1ms IFRM IFSM t P =10ms; sin.;Tj=150 o C SPT IGBT Modules Characteristics Symbol Conditions IGBT VGE(th) VGE = VCE, IC = 4m A ICES VGE = 0; VCE = VCES; Tj = 25(125)o C VCE(TO) Tj = 25(125)o C r CE VGE = 20V, Tj = 25(125)o C VCE(sat) IC = 50A; VGE = 15V; chip level Cies under following conditions C oes VGE = 0, VCE = 25V, f = 1MHz .. Cres LCE RCC'+EE' res., terminal-chip TC = 25(125)o C under following conditions: td(on) VCC = 600V, IC = 50A tr RGon = RGoff = 15 , Tj = 125o C td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)o C V(TO) Tj = 25(125)o C r T Tj = 25(125)o C IRRM IF = 50A; Tj = 125o C Qrr di/dt = 2100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M5 w TC = 25o C, unless otherwise specified min. 4.8 typ. max. Units V m A V m V n F 25 0.75(1) 90 55 400 40 5.7(4.7) 2(1.8) 1.1 18 80 8.5 3.1 0.3 0.6 0.05 3 2.5 5 5 160 2.5 1.2 26 n H m ns ns ns ns m J V V m A u C m J K/W K/W K/W Nm Nm g 5.5 6.5 0.1 0.3 1(0.9) 1.15(1.05) 18(24) 24(30) 1.9(2.1) 2.35(2.55) 4.5 0.6...