STD165 - Thyristor-Diode Modules

Sirectifier Semiconductors

Key Features

International standard package.
Copper base plate.
Planar passivated chips.
Isolation voltage 3600 V~.

STD165 thyristor-diode modules by Sirectifier Semiconductors - Datasheet Preview

Datasheet Details

Part number	STD165
Manufacturer	Sirectifier Semiconductors
File Size	507.65 KB
Description	Thyristor-Diode Modules
Datasheet	STD165 Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number	Description
STD165GKxx	Thyristor-Diode Modules
STD100	Thyristor-Diode Modules
STD116	Thyristor-Diode Modules
STD116GKxx	Thyristor-Diode Modules
STD130	Thyristor-Diode Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD/SDT165 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT165GK08 900 STD/SDT165GK12 1300 STD/SDT165GK14 1500 STD/SDT165GK16 1700 STD/SDT165GK18 1900 STD/SDT165GK20 2100 STD/SDT165GK22 2300 VRRM VDRM V 800 1200 1400 1600 1800 2000 2200 Dimensions in mm (1mm=0.0394") www.DataSheet4U.com Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.5A diG/dt=0.5A/us Test Conditions Maximum Ratings 300 165 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.