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SXA-289 - Medium Power GaAs HBT Amplifier

Description

Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

Features

  • Patented High Reliability GaAs HBT Technology.
  • High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 IP3 IP3.
  • Surface-Mountable Power Plastic Package.

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Datasheet Details

Part number SXA-289
Manufacturer Sirenza Microdevices
File Size 345.36 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXA-289 Datasheet
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Full PDF Text Transcription

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Preliminary Product Description Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-289 5-2000 MHz Medium Power GaAs HBT Amplifier Product Features • Patented High Reliability GaAs HBT Technology • High Output 3rd Order Intercept : +41.5 dBm typ.
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